This project explores applications of the platform technology of SiC on Si. The application of the hybrid materials is legend and includes the areas of semi-conductor memories, power integrated electronics, micro electromechanical systems (MEMS), growth platform for other compound materials such as GaN and as a heterojunction material for solar cell and high gain bipolar devices.
We are particularly interested in the energy efficiency of new devices.
To date the main application has been the use of 3C SiC onto Si for memory applications and this will continue to be one of the main drivers. Research breakthroughs include low temperature epitaxy of 3C SiC on Si, charge retention times at 85C in excess of 10 years and MOS purity oxides to enable quality MOS devices in SiC.