The wide energy gap of gallium nitride (GaN), which enables the emission of the highly-energetic blue light by light-emitting diodes, is very attractive for the development of power devices. An additional advantage for these devices is the inherently high mobility of the current carriers, because of which these devices are referred to as high electron mobility transistors (HEMTs).
GaN is currently deposited on either silicon carbide or sapphire wafers. Because of the small area and high cost of silicon carbide and sapphire wafers, there is an extensive research effort to deposit GaN on large-diameter silicon wafers. GaN on silicon wafers has already enabled commercialization of some power devices, especially for high-frequency applications. However, the mainstream power-electronics applications will require the development of HEMTs that act as normally-off switches.
In addition to the research at Griffith University that is focused on the growth of GaN on our unique large-diameter SiC/Si wafers, this project is focused on the development of normally-off GaN-based HEMTs. This research is conducted in collaboration with Prof. Xu and his team at Shandong University and Inspur Huaguang Optoelectronics Co. Ltd.