Griffith University

Cleanroom design

• Ballroom clean room with subwafer fab
  • Minimise cleanroom size requirement (maximize packing density)
  • Max Flexibility for equipment installs
  • Lowest contamination
  • Subwafer fab
    • Air return path
    • Housing for all support equipment and service infrastructure
    • Semi-clean environment
      

Cleanroom performance

• Adequate for initial R+D
  • Lithography area
    • Class 100 improve to Class 10 (mid 2011)
      
    • Temp 21 degree C +/- 0.2 degree C
    • Relative Humidity 45% +/- 3
  • Ball room area
    • Class 1000
    • Temp 21 degree C +/- 1

• Flexible Upgradeable path as required
  • Mini environment- via hanging shields from ceiling filters
  • Increase number of filter units 3x
  • Use of UPLA filters

Process capability overview

• wafer processing (6")
  • Employ standard industrial processing technology
  • manual wafer handling
  • 200mm compatible equipment
• 1.0µm lithography
• Epitaxial SiC deposition
• Full process flow as required for R+D and production
• Oxide growth, Polysilicon deposition, doping
  
• Dielectric and metal deposition
• Plasma and wet etching

Equipment list

See attached for details (PDF 58KB)

QMF equipment and performance overview

See attached for details (PDF 550KB)