Griffith University

B Engineering, M Science, PhD

Professor, Griffith School of Engineering

Contact details for Professor Sima Dimitrijev

Research expertise

• Semiconductor Devices and Circuits
• MOSFET design, modelling, characterisation, and applications, including new structures and SiC MOSFETs
• Nonvolatile random-access memories (NVRAMs) on SiC
• Gate oxides: growth (including nitridation), characterization, modeling, and gate oxides grown on SiC

Current teaching areas

• Introduction to Electronics
• Integrated Electronics
• Industrial Affiliates Program

Publications

• S. Dimitrijev, Principles of Semiconductor Devices, Oxford University Press, New York, 2006 (ISBN: 0-19-516113-0)
• S. Dimitrijev, Undertsanding Semiconductor Devices, Oxford University Press, New York, 2000 (ISBN: 0-19-513186-X)
• S. Dimitrijev, B. Harrison, P. Tanner, K. Cheong, and J. Han, "Properties of Nitrided Oxides on SiC", in Silicon Carbide: Recent Major Advances, W.J. Choyke, H. Matsunami, and G. Pensl, Eds., Springer, Berlin, 2003 (pp. 373--386).
• H.K. Jung and S. Dimitrijev, "Analysis of Subthreshold CArrier Transport for Ultimate DGMOSFET", Institute of Electrical and Electronics Engineers Transactions on Electron Devices, vol. 53, pp. 685-691, 2006.
• S. Dimitrijev, "Silicon Carbide as a Material for Mainstream Electronics", Microelectronic Engineering, vol. 83, pp. 123-125, 2006.
• S. Dimitrijev, "The SiC-SiO2 Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material", Materials Science Forum, Vols. 457-460, pp. 1263-1268, 2004.K.Y. Cheong, S. Dimitrijev, and J.Han, "Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC", Institute of Electrical and Electronics Engineers Transactions on Electron Devices, vol. 51, pp. 1361-1365, 2004.
• V.V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K.Y. Cheong, and S. Dimitrijev, "Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation", Applied Physics Letters, vol. 82, No. 4, pp. 568-570, 2003.
• K.Y. Cheong and S. Dimitrijev, "MOS Capacitor on 4H-SiC as a Nonvolatile Memory Element", Institute of Electrical and Electronics Engineers Electron Device Letters, vol. 23, No. 7, pp. 404-406, 2002.
• R. Schorner, P. Friedrichs, D. Peters, D. Stephani, S. Dimitrijev, and P. Jamet, "Enhanced Channel Mobility of 4H-SiC MOSFETs Fabricated with Standard Power MOSFET Technology and Gate-Oxide Nitridation", Applied Physics Letters, vol. 80, pp. 4253-4256, 2002.
• S. Dimitrijev, K.Y. Cheong, J. Han, H.B. Harrison, "Charge-retention in metal--oxide--semiconductor capacitors on SiC used as nonvolatile-memory elements", Applied Physics Letters, vol. 80, No. 18, pp. 3421-3423, 2002.
• P. Jamet, S. Dimitrijev, and P. Tanner, "Effects of Nitridation in Gate Oxides Grown on 4H-SiC", Journal of Applied Physics, Vol. 90, pp. 5058-5063, 2001.
• H. Linewih, S. Dimitrijev, C.E. Weitzel, and H.B. Harrison, "Novel SiC Accumulation-Mode Power MOSFET", Institute of Electrical and Electronics Engineers Transactions on Electron Devices, vol. 48, pp. 1711-1717, 2001.
• T. Smith, S. Dimitrijev, and H.B. Harrison, "Controlling a DC-DC Converter by Using the Power MOSFET as a Voltage Controlled Resistor", Institute of Electrical and Electronics Engineers Transactions on Circuits and Systems -- I: Fundamental Theory and Applications, Vol. 47, pp. 357-362, 2000.
• T. Smith and S. Dimitrijev, "Analysis of a Multi-Resonant Forward Converter Based on Non-Ideal Coupling of the Transformer", Institute of Electrical and Electronics Engineers Transactions on Power Electronics, vol. 15, pp. 111-120, 2000.
• D. Rowlands and S. Dimitrijev, "Derivation of a Nonlinear Variance Equation and Its Application to SOI Technology", Institute of Electrical and Electronics Engineers Transactions on Semiconductor Manufacturing, vol. 13, pp. 492-496, 2000.
• H.-F. Li, S. Dimitrijev, D. Sweatman, H.B. Harrison, P. Tanner, and B. Feil, "Investigation of Nitric Oxide and Ar Annealed SiO2/SiC Interfaces by X-Ray Photoelectron Spectroscopy", J. Appl. Phys., vol. 86, pp. 4316-4321, 1999.
• S. Dimitrijev, P. Tanner, and H.B. Harrison, "Slow-Trap Profiling of NO and N2O Nitrided Oxides Grown on Si and SiC Substrates", Introductory Invited Paper, Microelectron. Reliab., vol. 39, pp. 441-449, 1999.
• M.A. Rosa, N.Q. Ngo, D. Sweatman, S. Dimitrijev, and H.B. Harrison, "Self-Alignment Of Optical Fibres With Optical Quality End-Polished Silicon Rib Waveguides Using Wet Chemical Micromachining Techniques", Institute of Electrical and Electronics Engineers Journal of Selected Topics in Quantum Electronics, vol. 5, pp. 1249-1254, 1999.
• P. Tanner, S. Dimitrijev, H.-F. Li, D. Sweatman, K.E. Prince, and H.B. Harrison, "SIMS Analysis of Nitrided Oxides Grown on 4H-SiC", Institute of Electrical and Electronics Engineers/TSM Journal of Electronic Materials, vol. 28, pp. 109-111, 1999.
• M.A. Rosa, S. Dimitrijev, and H.B. Harrison, "Enhanced electrostatic force generation capability of angled comb finger design used in electrostatic comb-drive actuators", Electronics Letters, vol. 34, pp. 1787-1788, 1998.
• H.-F. Li, S. Dimitrijev, and H.B. Harrison, "Improved reliability of NO-nitrided SiO2 Grown on p-type 4H-SiC", Institute of Electrical and Electronics Engineers Electron Device Letters, vol. 19, pp. 279-281, 1998.
• S. Dimitrijev, H.-F. Li, H.B. Harrison, and D. Sweatman, "Nitridation of Silicon-Dioxide Films Grown on 6H Silicon Carbide", Institute of Electrical and Electronics Engineers Electron Device Letters, vol. 18, pp. 175-177, 1997.
• P. Tanner, S. Dimitrijev, Y.-T. Yeow, and H.B. Harrison, "Measurement of Plasma Etch Damage by a New Slow Trap Profiling Technique", Institute of Electrical and Electronics Engineers Electron Device Letters, vol. 17, pp. 515-517, 1996.
• P. Tanner, S. Dimitrijev, and H.B. Harrison, "Technique for Monitoring Slow Interface Trap Characteristics in MOS Capacitors", Electron. Lett., vol. 31, pp. 1880-1881, 1995.
• S. Dimitrijev and H.B. Harrison, "Modeling the Growth of Thin Silicon Oxide Films on Silicon", J. Appl. Phys., vol. 80, pp. 2467-2470, 1996.
• S. Dimitrijev, H.B. Harrison, and D. Sweatman, "Extension of the Deal--Grove Oxidation Model to Include the Effects of Nitrogen", Institute of Electrical and Electronics Engineers Transactions on Electron Devices, vol. 43, pp. 267-272, 1996.
• Z.-Q. Yao, H.B. Harrison, S. Dimitrijev, and Y.T. Yeow, "Effects of Nitric Oxide Annelaing on Thermally Grown Silicon Dioxide Characteristics", Institute of Electrical and Electronics Engineers Electron Device Letters, vol. 16, pp. 345-347, 1995.
• R. Sitte, S. Dimitrijev, and H. B. Harrison, "Device Parameter Changes Caused by Manufacturing Fluctuations of Deep Submicron MOSFETs", Institute of Electrical and Electronics Engineers Trans. Electron Devices, vol. 41, pp. 2210-2215, 1994.